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| 2N7002A N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features * * * * * * * * * N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package ESD Protected Gate, 1.2kV HBM Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2 and 4) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data * * * * * * * * * SOT-23 NEW PRODUCT Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Copper leadframe). Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) Drain D Gate ESD PROTECTED, 1.2kV TOP VIEW Gate Protection Diode G Source S TOP VIEW Equivalent Circuit Maximum Ratings @TA = 25C unless otherwise specified Symbol VDSS VGSS ID Value 60 20 115 73 800 Units V V mA Characteristic Drain-Source Voltage Gate-Source Voltage (Note 1) Drain Current (Note 1) Continuous Continuous Continuous @ 100C Pulsed Thermal Characteristics @TA = 25C unless otherwise specified Symbol PD RJA TJ, TSTG Value 250 1.6 500 -55 to +150 Units mW mW/C C/W C Characteristic Total Power Dissipation Derating above TA = 25C (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Notes: @TA = 25C unless otherwise specified Symbol BVDSS @ TC = 25C @ TC = 125C IDSS IGSS VGS(th) @ TJ = 25C @ TJ = 125C RDS (ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min 60 1.2 80 Typ 70 3.5 3.0 23 3.4 1.4 10 33 Max 1.0 500 10 2.0 6 5 Unit V A A V mS pF pF pF ns ns Test Condition VGS = 0V, ID = 10A VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250A VGS = 5.0V, ID = 0.115A VGS = 10V, ID = 0.115A VDS = 10V, ID = 0.115A VDS = 25V, VGS = 0V, f = 1.0MHz VDD = 30V, ID = 0.115A, RL = 150, VGEN = 10V, RGEN = 25 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. Halogen and Antimony Free. 3. Short duration pulse test used to minimize self-heating effect. 4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb203 Fire Retardants. 2N7002A Document number: DS31360 Rev. 4 - 2 1 of 4 www.diodes.com May 2008 (c) Diodes Incorporated 2N7002A 0.6 1 VDS = 5V Pulsed 0.5 0.4 NEW PRODUCT 0.3 ID, DRAIN CURRENT (A) 0.1 0.2 TA = 150C T A = 85C TA = 25C TA = -55C 0.1 0 0.01 1 2 3 4 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 5 9 8 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () 2.5 2.0 7 6 5 4 3 2 1 VGS = 5V 1.5 1.0 VGS = 10V 0.5 0.1 0.2 0.3 0.4 0.5 0.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 On-Resistance vs. Drain Current & Gate Voltage 0 0 2.0 VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 -50 ID = 250A 100 CT, CAPACITANCE (pF) Ciss 10 Coss 1 Crss -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 Gate Threshold Variation vs. Ambient Temperature 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Total Capacitance 40 2N7002A Document number: DS31360 Rev. 4 - 2 2 of 4 www.diodes.com May 2008 (c) Diodes Incorporated 2N7002A 1 IS, SOURCE CURRENT (A) 0.1 TA = 150C T A = 125C NEW PRODUCT 0.01 TA = 85C 0.001 TA = 25C TA = -55C 0.0001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Reverse Drain Current vs. Source-Drain Voltage Ordering Information Part Number 2N7002A-7 Notes: (Note 5) Case SOT-23 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information MN1 = Product Type Marking Code YM = Date Code Marking Y = Year ex: V = 2008 M = Month ex: 9 = September MN1 Date Code Key Year Code Month Code 2008 V Jan 1 Feb 2 2009 W Mar 3 2010 X Apr 4 May 5 YM 2011 Y Jun 6 2012 Z Jul 7 Aug 8 2013 A Sep 9 2014 B Oct O Nov N 2015 C Dec D Package Outline Dimensions A TOP VIEW BC G H K M J D F L SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 F 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 0 8 All Dimensions in mm 2N7002A Document number: DS31360 Rev. 4 - 2 3 of 4 www.diodes.com May 2008 (c) Diodes Incorporated 2N7002A Suggested Pad Layout Y Z C NEW PRODUCT Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 X E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. 2N7002A Document number: DS31360 Rev. 4 - 2 4 of 4 www.diodes.com May 2008 (c) Diodes Incorporated |
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